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ATP613-TL-HN-Channel 500 V 5.5A (Ta) 70W (Tc) Surface Mount ATPAK
N/A
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ABRmicro #.ABR2045-ATP613-1005733
ManufacturerOnsemi
MPN #.ATP613-TL-H
Estimated Lead Time-
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberATP613
Continuous Drain Current (ID) @ 25°C5.5A (Ta)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13.8 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)350 pF @ 30 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation70W (Tc)
RDS(on) Drain-to-Source On Resistance2Ohm @ 2.75A, 10V
Package Type (Mfr.)ATPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseATPAK (2 Leads+Tab)
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Environmental Information
PCN Design/Specification
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The ATP613-TL-H is a surface mount N-Channel MOSFET manufactured by Onsemi, designed for high-voltage applications with a voltage rating of 500 V. It is capable of handling a continuous current of 5.5A at ambient temperature (Ta) and has a power dissipation of up to 70W when mounted on a case (Tc). This MOSFET features a total gate charge of 13.8 nC when operated at 10 V, making it suitable for efficient switching applications. Its ATPAK package facilitates ease of assembly and integration into compact electronic designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.