Image is for reference only, the actual product serves as the standard.
ATP101-TL-HP-Channel 30 V 25A (Ta) 30W (Tc) Surface Mount ATPAK
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-ATP101-1019290
ManufacturerOnsemi
MPN #.ATP101-TL-H
Estimated Lead Time-
SampleGet Free Sample
DatasheetATP101(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberATP101
Continuous Drain Current (ID) @ 25°C25A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)18.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)875 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation30W (Tc)
RDS(on) Drain-to-Source On Resistance30mOhm @ 13A, 10V
Package Type (Mfr.)ATPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseATPAK (2 Leads+Tab)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The ATP101-TL-H is a P-channel MOSFET manufactured by Onsemi. It is designed for surface mount applications with an ATPAK package, offering efficient power management in compact electronic devices. This MOSFET can handle a maximum drain-to-source voltage of 30 volts and supports a continuous drain current of up to 25 amperes at ambient temperature (Ta), or 30 watts at case temperature (Tc). It features a gate charge of 18.5 nC at 10 volts, ensuring lower gate driving power consumption and fast switching capabilities. The device exhibits a low on-state resistance of 30 milliohms when carrying 13 amperes at 10 volts, contributing to its high efficiency in conducting current with minimal power loss.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.