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5LP01SPP-Channel 50 V 70mA (Ta) 250mW (Ta) Through Hole 3-SPA

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ABRmicro #.ABR2045-5LP01S-1009037
ManufacturerOnsemi
MPN #.5LP01SP
Estimated Lead Time-
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In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bag
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Bag
Lifecycle StatusObsolete
Base Product Number5LP01
Continuous Drain Current (ID) @ 25°C70mA (Ta)
Drain-to-Source Voltage (VDS)50 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 4V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)1.4 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7.4 pF @ 10 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation250mW (Ta)
RDS(on) Drain-to-Source On Resistance23Ohm @ 40mA, 4V
Package Type (Mfr.)3-SPA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseSC-72
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
EOL 21/Apr/2016
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The Onsemi part 5LP01SP is a P-Channel MOSFET that features a 50 V maximum voltage capacity and can handle a continuous current of 70mA at the rated ambient temperature. It is designed with a power dissipation capability of 250mW. This component is housed in a through-hole configuration with a 3-SPA package. It operates with a threshold voltage range starting from 1.5V to 4V. The part exhibits an input capacitance of 7.4 pF at 10 V and offers a drain-source on-resistance of 23 Ohm when driven at 40mA and 4V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.