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5HP01M-TL-HP-Channel 50 V 70mA (Ta) 150mW (Ta) Surface Mount MCP

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ABRmicro #.ABR2045-5HP01M-1012739
ManufacturerOnsemi
MPN #.5HP01M-TL-H
Estimated Lead Time-
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DatasheetDatasheet5HP01M(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product Number5HP01
Continuous Drain Current (ID) @ 25°C70mA (Ta)
Drain-to-Source Voltage (VDS)50 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)1.32 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6.2 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation150mW (Ta)
RDS(on) Drain-to-Source On Resistance22Ohm @ 40mA, 10V
Package Type (Mfr.)MCP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseSC-70, SOT-323
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Extended Links
Datasheets
5HP01M
Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Mult Dev EOL 19/Dec/2017
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The 5HP01M-TL-H is a P-Channel MOSFET manufactured by Onsemi, designed for surface mount applications. It is capable of handling a drain-source voltage of up to 50 V and a continuous drain current of 70 mA at a given temperature (Ta). The device has a power dissipation rating of 150 mW at the same temperature conditions. Its gate threshold voltage is specified at 4V and 10V, with a gate-source voltage maximum rating of ±20V. This MOSFET is constructed with metal oxide semiconductor technology, offering reliable performance in compact electronic designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.