ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
3LN01C-TB-EN-Channel 30 V 150mA (Ta) 250mW (Ta) Surface Mount SC-59-3/CP3

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-3LN01C-925613
ManufacturerOnsemi
MPN #.3LN01C-TB-E
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheet3LN01C(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
BS108ZL1GN/A
Onsemi
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
BUH150N/A
Onsemi
Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220
FDG6301N$0.3590
Onsemi
Mosfet Array 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
FDT86106LZ$1.1630
Onsemi
N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
HUFA75337S3STN/A
Onsemi
N-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)
HUFA75842S3SN/A
Onsemi
N-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
NTQD6968R2N/A
Onsemi
Mosfet Array 20V 6.6A 1.42W Surface Mount 8-TSSOP
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product Number3LN01
Continuous Drain Current (ID) @ 25°C150mA (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 4V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)1.58 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation250mW (Ta)
RDS(on) Drain-to-Source On Resistance3.7Ohm @ 80mA, 4V
Package Type (Mfr.)SC-59-3/CP3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-236-3, SC-59, SOT-23-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
3LN01C
Environmental Information
onsemi RoHS
PCN Obsolescence/ EOL
Mult Dev EOL 19/Dec/2017
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The part 3LN01C-TB-E, manufactured by Onsemi, is an N-Channel MOSFET designed for surface-mount applications, housed in an SC-59-3/CP3 package. It operates with a drain-source voltage of up to 30 V and can handle a continuous drain current of 150 mA at TA. The device features a power dissipation rating of 250 mW at TA and exhibits a gate charge of 1.58 nC when a 10 V gate-source voltage is applied. With a drain-source on-state resistance of 3.7 Ohms at 80 mA and 4 V, this MOSFET is suitable for use in circuits requiring efficient switching performance and reliable operation in compact spaces.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.