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2SK4197FSN-Channel 600 V 3.3A (Tc) 2W (Ta), 28W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-2SK419-939577
ManufacturerOnsemi
MPN #.2SK4197FS
Estimated Lead Time-
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product Number2SK4197
Continuous Drain Current (ID) @ 25°C3.3A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)260 pF @ 30 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation2W (Ta), 28W (Tc)
RDS(on) Drain-to-Source On Resistance3.25Ohm @ 1.8A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 24/Jul/2015
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Onsemi 2SK4197FS is an N-Channel MOSFET designed for high-voltage and moderate current applications with a maximum voltage rating of 600 V and a continuous drain current of 3.3A when properly mounted on a heat sink. Housed in a TO-220-3 through-hole package, it offers power dissipation capabilities of up to 28W under appropriate conditions. The device features a drain-source on-resistance of 3.25 Ohms at a drain current of 1.8A with a gate-source voltage of 10V. Additionally, it tolerates a gate-source voltage range of ±30V, making it suitable for general-purpose switching tasks that fit within its electrical limits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.