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2SK4117LSN-Channel 400 V 10.4A (Tc) 2W (Ta), 35W (Tc) Through Hole TO-220FI(LS)

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ABRmicro #.ABR2045-2SK411-947946
ManufacturerOnsemi
MPN #.2SK4117LS
Estimated Lead Time-
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DatasheetDatasheet2SK4117LS(PDF)
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In Stock: 3
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Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Bag
Lifecycle StatusObsolete
Base Product Number2SK4117
Continuous Drain Current (ID) @ 25°C10.4A (Tc)
Drain-to-Source Voltage (VDS)400 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)30.6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)755 pF @ 30 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation2W (Ta), 35W (Tc)
RDS(on) Drain-to-Source On Resistance420mOhm @ 7.5A, 10V
Package Type (Mfr.)TO-220FI(LS)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-220-3 Full Pack
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Datasheets
2SK4117LS
Environmental Information
onsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The 2SK4117LS is a discrete N-Channel MOSFET manufactured by Onsemi, designed for use in high voltage applications. It is capable of withstanding a maximum drain-source voltage of 400 V and can conduct a current up to 10.4 A at the case temperature (Tc) of 25°C. The component is housed in a TO-220FI package that allows through-hole mounting. It dissipates up to 2 W when operated in ambient conditions (Ta) and up to 35 W when mounted to a heat sink (Tc). The MOSFET exhibits an input capacitance of 755 pF at a voltage of 30 V, with an on-state resistance of 420 milliohms at a current of 7.5 A and gate-source voltage of 10 V, making it suitable for efficient switching operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.