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2SK4087LS-1EN-Channel 600 V 9.2A (Tc) 2W (Ta), 40W (Tc) Through Hole TO-220F-3FS
N/A
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ABRmicro #.ABR2045-2SK408-953208
ManufacturerOnsemi
MPN #.2SK4087LS-1E
Estimated Lead Time-
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product Number2SK4087
Continuous Drain Current (ID) @ 25°C9.2A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)46 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1200 pF @ 30 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation2W (Ta), 40W (Tc)
RDS(on) Drain-to-Source On Resistance610mOhm @ 7A, 10V
Package Type (Mfr.)TO-220F-3FS
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-220-3 Full Pack
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Onsemi 2SK4087LS-1E is an N-channel MOSFET designed for high-voltage applications, featuring a 600 V drain-source voltage and a continuous current capacity of 9.2A under certain conditions (Tc). It is housed in a compact TO-220F-3FS package suitable for through-hole mounting. The MOSFET exhibits an on-resistance of 610mOhm at a drain current of 7A and gate-source voltage of 10V, allowing efficient power management. Additionally, it supports a total gate charge of 46 nC at 10V, making it a viable choice for applications requiring reliable switching performance up to 40W (Tc). The device also provides a gate-source voltage rating of ±30V, enhancing its robustness in variable operating environments.
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