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2SK4085LS-1EN-Channel 500 V 11A (Tc) 2W (Ta), 40W (Tc) Through Hole TO-220F-3FS
N/A
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ABRmicro #.ABR2045-2SK408-960272
ManufacturerOnsemi
MPN #.2SK4085LS-1E
Estimated Lead Time-
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product Number2SK4085
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)46.6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1200 pF @ 30 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation2W (Ta), 40W (Tc)
RDS(on) Drain-to-Source On Resistance430mOhm @ 8A, 10V
Package Type (Mfr.)TO-220F-3FS
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-220-3 Full Pack
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The 2SK4085LS-1E is an N-channel MOSFET manufactured by Onsemi, designed for high-voltage and moderate current applications. It features a maximum drain-source voltage of 500 V and a continuous drain current of 11 A, when used with adequate heatsinking. The device is housed in a TO-220F-3FS package, providing a through-hole mounting option. It offers a power dissipation capacity of 2W in free air and 40W when mounted to a case. This MOSFET has a gate threshold voltage of 10V, a gate charge of 46.6 nC at 10 V, and an input capacitance of 1200 pF at 30 V, indicating its capability to handle fast switching applications efficiently.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.