The part 2SJ661-DL-1E from Onsemi is a P-channel MOSFET transistor designed for efficient switching and amplification tasks in electronic circuits. It has a maximum voltage rating of 60V and a current capacity of 38A when measured at ambient temperature (Ta) and offers a power dissipation of 1.65W in free air, which can increase up to 65W when mounted on a heat-sinking surface (Tc). This surface-mount component comes in a TO-263-2 package and features a low on-resistance of 39 milliohms at 19A and 10V gate-source voltage, providing good efficiency for power applications. The gate charge requirement is 80 nC at 10V, facilitating manageable control within its operating specifications.