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2N7052Bipolar (BJT) Transistor NPN - Darlington 100 V 1.5 A 200MHz 625 mW Through Hole TO-92-3

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ABRmicro #.ABR2045-2N7052-908632
ManufacturerOnsemi
MPN #.2N7052
Estimated Lead Time-
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DatasheetDatasheet2N7052, 2N7053, NZT7053(PDF)
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
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Bulk
Shipping DateNovember 5, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product Number2N7052
Collector Current (Iᴄ)@25°C1.5 A
Collector Cut-off Current (Iᴄᴇs)(Max.)200nA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 1A, 5V
Frequency - Transition200MHz
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max625 mW
Package Type (Mfr.)TO-92-3
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mA
Collector-Emitter Breakdown Voltage (Max.)100 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
2N7052, 2N7053, NZT7053
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)