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2N7002MTFN-Channel 60 V 115mA (Tc) 200mW (Ta) Surface Mount SOT-23-3
N/A
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ABRmicro #.ABR2045-2N7002-1003727
ManufacturerOnsemi
MPN #.2N7002MTF
Estimated Lead Time-
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Datasheet2N7000/02, NDS7002A Datasheet(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product Number2N7002
Continuous Drain Current (ID) @ 25°C115mA (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)50 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation200mW (Ta)
RDS(on) Drain-to-Source On Resistance7.5Ohm @ 500mA, 10V
Package Type (Mfr.)SOT-23-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 1mA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The 2N7002MTF is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications with its SOT-23-3 package. It operates with a maximum drain-to-source voltage of 60 V and a continuous drain current of up to 115 mA when held at a case temperature. The MOSFET can dissipate up to 200 mW of power at ambient temperature. Key performance characteristics include a gate threshold voltage of 3V at 1mA, a drain-to-source on-resistance of 7.5 Ohms at a drain current of 500mA with a gate-source voltage of 10V, and a total gate charge of 50 pF at 25 V. These specifications make the 2N7002MTF suitable for a variety of electronic applications requiring efficient switching and voltage regulation.
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