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2N5770_D26ZRF Transistor NPN 15V 50mA 350mW Through Hole TO-92-3

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ABRmicro #.ABR2045-2N5770-1032451
ManufacturerOnsemi
MPN #.2N5770_D26Z
Estimated Lead Time-
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DatasheetDatasheet2N5770(PDF)
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 5, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product Number2N5770
Collector Current (Iᴄ)@25°C50mA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 8mA, 10V
Frequency - Transition-
Gain15dB
Mounting StyleThrough Hole
Noise Figure (dB Typ @ f)6dB @ 60MHz
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max350mW
Package Type (Mfr.)TO-92-3
Transistor TypeNPN
Collector-Emitter Breakdown Voltage (Max.)15V
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
2N5770
Environmental Information
onsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)