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2N5551_J61ZBipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 625 mW Through Hole TO-92-3

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ABRmicro #.ABR2045-2N5551-908399
ManufacturerOnsemi
MPN #.2N5551_J61Z
Estimated Lead Time-
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DatasheetDatasheet2N5551, MMBT5551(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 5, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product Number2N5551
Collector Current (Iᴄ)@25°C600 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition100MHz
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max625 mW
Package Type (Mfr.)TO-92-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
Collector-Emitter Breakdown Voltage (Max.)160 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
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Extended Links
Datasheets
2N5551, MMBT5551
Environmental Information
onsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)