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SI4420DY,518N-Channel 30 V 12.5A (Tj) 2.5W (Ta) Surface Mount 8-SO

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ABRmicro #.ABR2045-SI4420-956036
ManufacturerNXP Semiconductors
MPN #.SI4420DY,518
Estimated Lead Time-
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DatasheetDatasheetSI4420DY(PDF)
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSI4
Continuous Drain Current (ID) @ 25°C12.5A (Tj)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)120 nC @ 10 V
MfrNXP USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance9mOhm @ 12.5A, 10V
Package Type (Mfr.)8-SO
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Extended Links
Datasheets
SI4420DY
Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Packaging
All Dev Label Update 15/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level2 (1 Year, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SI4420DY,518 is an N-channel MOSFET manufactured by NXP Semiconductors, designed for surface-mount applications. It is capable of handling a maximum drain-source voltage of 30 V and a continuous drain current of 12.5 A at a certain junction temperature (Tj). The power dissipation capability is 2.5 W when mounted on a suitable surface (Ta). The part also features a gate charge of 120 nC at a gate-source voltage of 10 V and a threshold voltage of 1 V at a drain current of 250 µA. It can withstand gate-source voltages up to ±20 V, making it suitable for various electronic applications. The device is encapsulated in an 8-SO package, optimizing it for compact circuit designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.