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MRF6S27085HR3RF Mosfet 28 V 900 mA 2.66GHz 15.5dB 20W NI-780H-2L

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ABRmicro #.ABR285-MRF6S2-904830
ManufacturerNXP Semiconductors
MPN #.MRF6S27085HR3
Estimated Lead Time-
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DatasheetDatasheetMRF6S27085H (PDF)
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberMRF6
Current - Test900 mA
Current Rating (Amps)-
Frequency2.66GHz
Gain15.5dB
Mounting StyleChassis Mount
Noise Figure-
Output Power20W
Package Type (Mfr.)NI-780H-2L
TechnologyLDMOS
Rated Voltage68 V
Voltage - Test28 V
Package / CaseSOT-957A
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
MRF6S27085H
Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Obsolescence/ EOL
Multiple Devices 04/Mar/2013
PCN Packaging
All Dev Label Update 15/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0075 (With an operating frequency not less than 30 MHz; No import duty applies)
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Additional Details
The MRF6S27085HR3, manufactured by NXP Semiconductors, is an RF MOSFET designed for high frequency operations. It operates at a voltage of 28 V and a current of 900 mA, providing power capabilities up to 20W. The component operates efficiently up to 2.66 GHz with a gain of 15.5 dB, which makes it suitable for various RF applications. This device features a rugged LDMOS construction and is encapsulated in a NI-780H-2L package, designed to withstand a maximum voltage of 68 V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.