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BUK652R7-30C,127N-Channel 30 V 100A (Tc) 204W (Tc) Through Hole TO-220AB

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ABRmicro #.ABR278-BUK652-904686
ManufacturerNXP Semiconductors
MPN #.BUK652R7-30C,127
Estimated Lead Time-
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DatasheetDatasheetBUK652R7-30C (PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
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Shipping DateDecember 24, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberBUK65
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)114 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6960 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation204W (Tc)
RDS(on) Drain-to-Source On Resistance3.3mOhm @ 25A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.8V @ 1mA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
BUK652R7-30C
Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Obsolescence/ EOL
Multiple Devices 31/Dec/2011
PCN Packaging
All Dev Label Update 15/Dec/2020
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The BUK652R7-30C,127 is an N-channel MOSFET manufactured by NXP Semiconductors. This component is designed for use in power management applications, offering a drain-source voltage rating of 30 V and a continuous drain current capability of 100A at a case temperature (Tc). Its power dissipation capability is rated at 204W (Tc), making it suitable for high-power applications. The MOSFET comes in a Through Hole TO-220AB package, facilitating easy mounting and efficient heat dissipation. With gate threshold voltages of 4.5V and 10V, and a total gate charge of 114 nC at 10V, it ensures efficient switching performance. The device exhibits a low on-state resistance of 3.3 milliohms at 25A, 10V, contributing to minimal power loss during operation.
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