BUK7506-75B,127N-Channel 75 V 75A (Tc) 300W (Tc) Through Hole TO-220AB
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ABRmicro #.ABR278-BUK750-905480
ManufacturerNXP Semiconductors
MPN #.BUK7506-75B,127
Estimated Lead Time-
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Datasheet
BUK7506-75B (PDF)
BUK7506-75B (PDF)
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Shipping DateDecember 24, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberBUK75
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)91 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7446 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance5.6mOhm @ 25A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The BUK7506-75B,127 is an N-channel MOSFET manufactured by NXP Semiconductors, designed for high power applications. It is capable of handling a maximum continuous current of 75A and a voltage of up to 75V, with a power dissipation of 300W when mounted appropriately (accompanying thermal resistance considerations). This device is housed in a through-hole TO-220AB package, facilitating easy installation and thermal management. It features a gate charge of 91 nC at a driving voltage of 10V and demonstrates a threshold voltage of 4V at a current of 1mA, indicating its suitability for efficient switching operations.
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