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PSMN8R0-30YLC,115N-Channel 30 V 54A (Tc) 42W (Tc) Surface Mount LFPAK56, Power-SO8

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ABRmicro #.ABR2045-PSMN8R-993764
ManufacturerNXP Semiconductors
MPN #.PSMN8R0-30YLC,115
Estimated Lead Time-
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DatasheetDatasheetPSMN8R0-30YLC(PDF)
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In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberPSMN8
Continuous Drain Current (ID) @ 25°C54A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)848 pF @ 15 V
MfrNXP USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation42W (Tc)
RDS(on) Drain-to-Source On Resistance7.9mOhm @ 15A, 10V
Package Type (Mfr.)LFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.95V @ 1mA
Package / CaseSC-100, SOT-669
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
PSMN8R0-30YLC
Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Assembly/Origin
Leadframe Supplier Add 13/Jun/2016
PCN Obsolescence/ EOL
Multiple Devices 25/Dec/2013
PCN Packaging
All Dev Label Update 15/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN8R0-30YLC,115 is a high-performance N-channel MOSFET manufactured by NXP Semiconductors, designed for efficient power management and switching applications. It operates with a maximum voltage of 30V and can handle a current of up to 54A with a power dissipation of 42W when mounted on a heat sink (Tc). This MOSFET features a low on-resistance of 7.9 mOhm at 15A and 10V, highlighting its efficiency in minimizing power losses. It is housed in a compact, surface-mount LFPAK56 package, also recognized as Power-SO8, which aids in space-saving on circuit boards. The gate charge is measured at 15 nC with a 10V gate voltage, contributing to its fast switching capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.