PSMN7R6-60XSQN-Channel 60 V 51.5A (Tc) 46W (Tc) Through Hole TO-220F
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ABRmicro #.ABR2045-PSMN7R-1003840
ManufacturerNXP Semiconductors
MPN #.PSMN7R6-60XSQ
Estimated Lead Time-
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Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberPSMN7
Continuous Drain Current (ID) @ 25°C51.5A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)38.7 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2651 pF @ 30 V
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation46W (Tc)
RDS(on) Drain-to-Source On Resistance7.8mOhm @ 25A, 10V
Package Type (Mfr.)TO-220F
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.6V @ 1mA
Package / CaseTO-220-3 Full Pack, Isolated Tab
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Environmental Information
PCN Obsolescence/ EOL
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN7R6-60XSQ is a discrete N-channel MOSFET manufactured by NXP Semiconductors. It is designed to handle a maximum drain-source voltage of 60V and can conduct a continuous drain current of 51.5A at a case temperature (Tc). With a power dissipation capacity of 46W at Tc, this MOSFET is housed in a TO-220F through-hole package, providing ease of integration into various electronic circuits. It features a low on-state resistance of 7.8mOhm when carrying 25A at 10V gate-source voltage, and its input capacitance is 2651 pF at a 30V gate-source voltage, both contributing to efficient switching performance.
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