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PSMN7R0-100XS,127N-Channel 100 V 55A (Tc) 57.7W (Tc) Through Hole TO-220F

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ABRmicro #.ABR2045-PSMN7R-920013
ManufacturerNXP Semiconductors
MPN #.PSMN7R0-100XS,127
Estimated Lead Time-
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DatasheetDatasheetPSMN7R0-100XS(PDF)
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In Stock: 8
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberPSMN7
Continuous Drain Current (ID) @ 25°C55A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)121 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6686 pF @ 50 V
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation57.7W (Tc)
RDS(on) Drain-to-Source On Resistance6.8mOhm @ 15A, 10V
Package Type (Mfr.)TO-220F
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3 Full Pack, Isolated Tab
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
PSMN7R0-100XS
Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Obsolescence/ EOL
Multiple Devices 05/Jul/2015
PCN Packaging
All Dev Label Update 15/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN7R0-100XS,127 is an N-channel MOSFET manufactured by NXP Semiconductors, designed for efficient power management. It operates with a maximum voltage of 100V and can handle a continuous current of up to 55A in proper thermal conditions. This MOSFET is housed in a TO-220F through-hole package, facilitating easy integration into various circuit boards while providing a maximum power dissipation of 57.7W. With a low on-state resistance of 6.8 milliohms at 15A and 10V, it offers excellent conductive efficiency. The device also has a gate-to-source voltage threshold tolerance of ±20V, ensuring reliable performance in various electrical environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.