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PSMN050-80PS,127N-Channel 80 V 22A (Tc) 56W (Tc) Through Hole TO-220AB

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ABRmicro #.ABR2045-PSMN05-1006785
ManufacturerNXP Semiconductors
MPN #.PSMN050-80PS,127
Estimated Lead Time-
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DatasheetDatasheetPSMN050-80PS(PDF)
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In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberPSMN0
Continuous Drain Current (ID) @ 25°C22A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)633 pF @ 12 V
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation56W (Tc)
RDS(on) Drain-to-Source On Resistance51mOhm @ 10A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
PSMN050-80PS
Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Design/Specification
Logo Marking Update 30/Nov/2016
PCN Obsolescence/ EOL
Multiple Devices 25/Dec/2013
PCN Packaging
All Dev Label Update 15/Dec/2020Logo 10/Dec/2016
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN050-80PS is an N-channel MOSFET manufactured by NXP Semiconductors. It features a voltage rating of 80 V and can handle a continuous drain current of 22 A under specified conditions (Tc), with a power dissipation capability of 56 W (Tc). The component is housed in a TO-220AB package, suitable for through-hole mounting. It requires a gate voltage of 4 V to conduct 1 mA and exhibits a total gate charge of 11 nC at a gate-source voltage of 10 V. The MOSFET is designed with a metal oxide semiconductor technology, ensuring efficient electronic switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.