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PSMN016-100XS,127N-Channel 100 V 32.1A (Tc) 46.1W (Tc) Through Hole TO-220F

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ABRmicro #.ABR2045-PSMN01-1006160
ManufacturerNXP Semiconductors
MPN #.PSMN016-100XS,127
Estimated Lead Time-
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In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberPSMN0
Continuous Drain Current (ID) @ 25°C32.1A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)46.2 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2404 pF @ 50 V
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation46.1W (Tc)
RDS(on) Drain-to-Source On Resistance16mOhm @ 10A, 10V
Package Type (Mfr.)TO-220F
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3 Full Pack, Isolated Tab
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Assembly/Origin
Additional Wafer Fab Source 28/Apr/2014
PCN Obsolescence/ EOL
Multiple Devices 05/Jul/2015
PCN Packaging
All Dev Label Update 15/Dec/2020Pack/Label Update 30/Nov/2016
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN016-100XS,127 is an N-Channel MOSFET manufactured by NXP Semiconductors, designed for efficient power handling with a maximum voltage rating of 100V and a continuous current capacity of 32.1A at a case temperature. It is packaged in a TO-220F through-hole configuration, offering ease of mounting for various assemblies. This component has a power dissipation capability of up to 46.1W at the case, ensuring robust performance under demanding conditions. Key electrical characteristics include an input capacitance of 2404 pF at 50V and a gate charge of 46.2 nC at 10V, with a low on-resistance of 16mOhm at 10A, 10V, which contributes to its efficiency in power switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.