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PMV56XN,215N-Channel 20 V 3.76A (Tc) 1.92W (Tc) Surface Mount SOT-23 (TO-236AB)

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ABRmicro #.ABR2045-PMV56X-1003268
ManufacturerNXP Semiconductors
MPN #.PMV56XN,215
Estimated Lead Time-
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberPMV5
Continuous Drain Current (ID) @ 25°C3.76A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)5.4 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)230 pF @ 10 V
MfrNXP USA Inc.
Mounting StyleSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
Maximum Power Dissipation1.92W (Tc)
RDS(on) Drain-to-Source On Resistance85mOhm @ 3.6A, 4.5V
Package Type (Mfr.)SOT-23 (TO-236AB)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)650mV @ 1mA (Min)
Package / CaseTO-236-3, SC-59, SOT-23-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PMV56XN,215 is an N-Channel MOSFET manufactured by NXP Semiconductors, designed for use in low-power surface mount applications. This component features a 20 V drain-source voltage and can handle a continuous drain current of 3.76A while dissipating up to 1.92W of power. Encased in a compact SOT-23 (TO-236AB) package, it operates with a gate-source voltage threshold as low as 650mV at 1mA. It supports gate voltages of 2.5V and 4.5V, with an input capacitance of 230 pF when subjected to a 10 V drain-source voltage, making it suitable for various compact electronic applications requiring efficient power management.
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