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PMR280UN,115N-Channel 20 V 980mA (Tc) 530mW (Tc) Surface Mount SC-75

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ABRmicro #.ABR2045-PMR280-925974
ManufacturerNXP Semiconductors
MPN #.PMR280UN,115
Estimated Lead Time-
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DatasheetDatasheetPMR280UN(PDF)
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberPMR2
Continuous Drain Current (ID) @ 25°C980mA (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)0.89 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)45 pF @ 20 V
MfrNXP USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation530mW (Tc)
RDS(on) Drain-to-Source On Resistance340mOhm @ 200mA, 4.5V
Package Type (Mfr.)SC-75
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CaseSC-75, SOT-416
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
PMR280UN
Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Obsolescence/ EOL
Advance Notice SOT416 Devices 02/Sep/2014MCU Dip Supply Situation 12/May/2015
PCN Packaging
All Dev Label Update 15/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The PMR280UN,115 is an N-channel MOSFET manufactured by NXP Semiconductors, designed for surface mount applications using the SC-75 package. This component operates at a voltage of 20 V and can handle a current of up to 980mA under specific conditions, with a power dissipation capacity of 530mW. It features a gate threshold voltage of 1V at 250µA, and its performance is characterized by an on-resistance of 340mOhm at 200mA and 4.5V. With its low on-resistance and compact packaging, this MOSFET is suited for compact electronic designs requiring efficient switching capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.