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PMN34LN,135N-Channel 20 V 5.7A (Tc) 1.75W (Tc) Surface Mount SC-74

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ABRmicro #.ABR2045-PMN34L-1020246
ManufacturerNXP Semiconductors
MPN #.PMN34LN,135
Estimated Lead Time-
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DatasheetDatasheetPMN34LN(PDF)
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In Stock: 13
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberPMN3
Continuous Drain Current (ID) @ 25°C5.7A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13.1 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)500 pF @ 20 V
MfrNXP USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.75W (Tc)
RDS(on) Drain-to-Source On Resistance34mOhm @ 2.5A, 10V
Package Type (Mfr.)SC-74
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseSC-74, SOT-457
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PMN34LN,135 is an N-Channel MOSFET manufactured by NXP Semiconductors. It is characterized by a 20 V drain-source voltage and a current capacity of 5.7A when properly cooled, with a power dissipation of 1.75W under similar conditions. Housed in a compact SC-74 surface-mount package, this MOSFET features a gate charge of 13.1 nC when driven at 10 V, making it suitable for efficient switching applications. The device supports gate-source voltages of 4.5V and 10V, with an absolute maximum of ±15V, indicating robustness in various circuit environments.
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