PMN20EN,115N-Channel 30 V 6.7A (Tj) 545mW (Ta) Surface Mount SC-74
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ABRmicro #.ABR2045-PMN20E-1021729
ManufacturerNXP Semiconductors
MPN #.PMN20EN,115
Estimated Lead Time-
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberPMN2
Continuous Drain Current (ID) @ 25°C6.7A (Tj)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18.6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)630 pF @ 15 V
MfrNXP USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation545mW (Ta)
RDS(on) Drain-to-Source On Resistance20mOhm @ 6.7A, 10V
Package Type (Mfr.)SC-74
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseSC-74, SOT-457
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Environmental Information
PCN Design/Specification
PCN Obsolescence/ EOL
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The PMN20EN,115 is an N-channel MOSFET manufactured by NXP Semiconductors, designed for surface mount applications with its SC-74 package. This component is specified for a maximum voltage of 30V and can handle a continuous current of 6.7A, with a power dissipation limit of 545mW at ambient temperature. It features a low on-resistance of 20 milliohms when operating at 6.7A and 10V, ensuring efficient conduction. Additionally, it can withstand voltage spikes of up to ±20V, making it suitable for various electronic circuits requiring reliable switching performance.
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