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PHU78NQ03LT,127N-Channel 25 V 75A (Tc) 107W (Tc) Through Hole IPAK

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ABRmicro #.ABR2045-PHU78N-984584
ManufacturerNXP Semiconductors
MPN #.PHU78NQ03LT,127
Estimated Lead Time-
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DatasheetDatasheetPHU78NQ03LT(PDF)
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In Stock: 9
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberPHU78
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)970 pF @ 12 V
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation107W (Tc)
RDS(on) Drain-to-Source On Resistance9mOhm @ 25A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
PHU78NQ03LT
Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Packaging
All Dev Label Update 15/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PHU78NQ03LT,127 is a robust N-Channel MOSFET manufactured by NXP Semiconductors. It is designed for use in environments requiring high efficiency and power handling, with a voltage rating of 25V and a current capacity of 75A under specified conditions. The component is capable of dissipating up to 107W, making it suitable for demanding electrical contexts. Its 9 mOhm on-resistance at a drain current of 25A and a gate-source voltage of 10V highlights its efficiency in conducting with minimal loss. Housed in a through-hole IPAK package, it provides ease of integration into various circuit boards. Additionally, the MOSFET exhibits a gate threshold voltage of 2V at a gate current of 1mA, contributing to its responsiveness and control in electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.