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PHT2NQ10T,135N-Channel 100 V 2.5A (Tc) 6.25W (Tc) Surface Mount SC-73

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ABRmicro #.ABR2045-PHT2NQ-1036341
ManufacturerNXP Semiconductors
MPN #.PHT2NQ10T,135
Estimated Lead Time-
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DatasheetDatasheetPHT2NQ10T(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberPHT2
Continuous Drain Current (ID) @ 25°C2.5A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)5.1 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)160 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
Maximum Power Dissipation6.25W (Tc)
RDS(on) Drain-to-Source On Resistance430mOhm @ 1.75A, 10V
Package Type (Mfr.)SC-73
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-261-4, TO-261AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
PHT2NQ10T
Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Packaging
All Dev Label Update 15/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PHT2NQ10T is a discrete N-channel MOSFET manufactured by NXP Semiconductors, designed for surface mount applications in a compact SC-73 package. It can handle a drain-source voltage of up to 100 V and continuous current of 2.5A with a power dissipation of 6.25W when mounted on a suitable heat sink. This metal-oxide semiconductor field-effect transistor features a gate-source voltage tolerance of ±20V and a capacitance of 160 pF at 25 V, highlighting its capability for efficient switching and amplification in electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.