PHD98N03LT,118N-Channel 25 V 75A (Tc) 111W (Tc) Surface Mount DPAK
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ABRmicro #.ABR2045-PHD98N-1024627
ManufacturerNXP Semiconductors
MPN #.PHD98N03LT,118
Estimated Lead Time-
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Datasheet
PHD98N03LT(PDF)
PHD98N03LT(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberPHD98
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3000 pF @ 20 V
MfrNXP USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation111W (Tc)
RDS(on) Drain-to-Source On Resistance5.9mOhm @ 25A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PHD98N03LT,118 is a surface-mount power MOSFET manufactured by NXP Semiconductors. It is an N-channel MOSFET that can handle a drain-source voltage of up to 25 volts and a continuous current of 75 amperes when mounted on a suitable heatsink (Tc). The device is designed to dissipate up to 111 watts of power. With a gate charge capacitance of 3000 pF at a gate-source voltage of 20 volts, it supports fast switching speeds. The MOSFET has a threshold voltage of 2 volts at a gate current of 1 mA and can operate effectively with gate-source voltages of 5 volts and 10 volts. It's housed in the industry-standard DPAK packaging, suitable for compact and efficient power management in electronic devices.
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