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PHD22NQ20T,118N-Channel 200 V 21.1A (Tc) 150W (Tc) Surface Mount DPAK

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ABRmicro #.ABR2045-PHD22N-916100
ManufacturerNXP Semiconductors
MPN #.PHD22NQ20T,118
Estimated Lead Time-
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DatasheetDatasheetPHD22NQ20T(PDF)
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In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 10, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberPHD22
Continuous Drain Current (ID) @ 25°C21.1A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)30.8 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1380 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation150W (Tc)
RDS(on) Drain-to-Source On Resistance120mOhm @ 12A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
PHD22NQ20T
Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Packaging
All Dev Label Update 15/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)