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PHB23NQ10LT,118N-Channel 100 V 23A (Tc) 98W (Tc) Surface Mount D2PAK

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ABRmicro #.ABR2045-PHB23N-982129
ManufacturerNXP Semiconductors
MPN #.PHB23NQ10LT,118
Estimated Lead Time-
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In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberPHB23
Continuous Drain Current (ID) @ 25°C23A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)49 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1704 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation98W (Tc)
RDS(on) Drain-to-Source On Resistance72mOhm @ 10A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PHB23NQ10LT,118 is a surface mount N-Channel MOSFET manufactured by NXP Semiconductors. Designed for efficient power handling, this device can accommodate up to 100 volts and 23 amperes, with a power dissipation capability of 98 watts when mounted on a suitable heat sink. Housed in a D2PAK package, the MOSFET features a gate charge of 49 nanocoulombs at 10 volts and a typical input capacitance of 1704 picofarads at 25 volts, making it suitable for high-performance applications requiring efficient switching.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.