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PHB119NQ06T,118N-Channel 55 V 75A (Tc) 200W (Tc) Surface Mount D2PAK

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ABRmicro #.ABR2045-PHB119-941735
ManufacturerNXP Semiconductors
MPN #.PHB119NQ06T,118
Estimated Lead Time-
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DatasheetDatasheetPHB119NQ06T(PDF)
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberPHB11
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)53 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2820 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation200W (Tc)
RDS(on) Drain-to-Source On Resistance7.1mOhm @ 25A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
PHB119NQ06T
Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Packaging
All Dev Label Update 15/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PHB119NQ06T,118 is an N-channel MOSFET manufactured by NXP Semiconductors, designed for surface mounting in a D2PAK package. It operates efficiently with a maximum voltage of 55 V and supports a continuous current of 75A under certain conditions. The device features a low on-state resistance of 7.1 milliohms at 25A and 10V, optimizing its performance in power handling. Additionally, it has a total gate charge of 53 nanocoulombs at 10V, which aids in switching efficiency. With a power dissipation capacity of up to 200W, this MOSFET is suitable for applications requiring robust power management.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.