PHB110NQ08LT,118N-Channel 75 V 75A (Tc) 230W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-PHB110-966151
ManufacturerNXP Semiconductors
MPN #.PHB110NQ08LT,118
Estimated Lead Time-
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Datasheet
PHP, PHB110NQ08LT(PDF)
PHP, PHB110NQ08LT(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberPHB11
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)127.3 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6631 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation230W (Tc)
RDS(on) Drain-to-Source On Resistance8.5mOhm @ 25A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental Information
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PHB110NQ08LT,118 is a power MOSFET manufactured by NXP Semiconductors, designed for efficient switching applications. It is an N-channel MOSFET with a drain-source voltage rating of 75 volts and a continuous drain current of 75 amperes at a case temperature. This component can dissipate up to 230 watts of power at the case. It is enclosed in a Surface Mount D2PAK package, which facilitates heat dissipation and space-saving on a circuit board. The gate-source threshold voltage is 2 volts at 1 mA, indicating the voltage needed to turn the device on. It has an input capacitance of 6631 pF at 25 volts and a total gate charge of 127.3 nC at 10 volts, which affect the switching speed and efficiency of the MOSFET.
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