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PHB108NQ03LT,118N-Channel 25 V 75A (Tc) 187W (Tc) Surface Mount D2PAK

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ABRmicro #.ABR2045-PHB108-972280
ManufacturerNXP Semiconductors
MPN #.PHB108NQ03LT,118
Estimated Lead Time-
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DatasheetDatasheetPHB,PHD,PHU108NQ03LT(PDF)
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In Stock: 8
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberPHB10
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)16.3 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1375 pF @ 12 V
MfrNXP USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation187W (Tc)
RDS(on) Drain-to-Source On Resistance6mOhm @ 25A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
PHB,PHD,PHU108NQ03LT
Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Packaging
All Dev Label Update 15/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PHB108NQ03LT,118 is an N-Channel MOSFET manufactured by NXP Semiconductors. It is designed to handle a maximum voltage of 25V and a continuous current of up to 75A under specific conditions, with a maximum power dissipation of 187W. This component is housed in a D2PAK surface-mount package, which is suitable for high-power applications in space-constrained environments. The device features a low gate charge of 16.3 nC at 4.5 V, enabling efficient switching performance. Additionally, it can withstand gate-source voltages of up to ±20V, providing versatility for various electronic applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.