PH1875L,115N-Channel 75 V 45.8A (Tc) 62.5W (Tc) Surface Mount LFPAK56, Power-SO8
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ABRmicro #.ABR2045-PH1875-987334
ManufacturerNXP Semiconductors
MPN #.PH1875L,115
Estimated Lead Time-
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Datasheet
PH1875L(PDF)
PH1875L(PDF)
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Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberPH18
Continuous Drain Current (ID) @ 25°C45.8A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)33.4 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2600 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation62.5W (Tc)
RDS(on) Drain-to-Source On Resistance16.5mOhm @ 20A, 10V
Package Type (Mfr.)LFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseSC-100, SOT-669
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Datasheets
Environmental Information
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PH1875L,115 is a high-performance N-Channel MOSFET manufactured by NXP Semiconductors. It is designed for surface-mount applications and comes in an LFPAK56, Power-SO8 package. This MOSFET can handle a maximum drain-source voltage of 75V and a continuous drain current of 45.8A when properly heat-sinked (at Tc). It has a power dissipation of 62.5W at the same case temperature. The device features a low gate threshold voltage, with specifications of 4.5V and 10V for effective operation, and can operate with a gate-source voltage up to ±15V. Its on-resistance is achieved at 2V with a gate current of 1mA.
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