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PH16030L,115N-Channel 30 V 38A (Tc) 41.6W (Tc) Surface Mount LFPAK56, Power-SO8

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ABRmicro #.ABR2045-PH1603-938678
ManufacturerNXP Semiconductors
MPN #.PH16030L,115
Estimated Lead Time-
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DatasheetDatasheetPH16030L(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberPH16
Continuous Drain Current (ID) @ 25°C38A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)8.2 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)680 pF @ 12 V
MfrNXP USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation41.6W (Tc)
RDS(on) Drain-to-Source On Resistance16.9mOhm @ 15A, 10V
Package Type (Mfr.)LFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseSC-100, SOT-669
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
PH16030L
Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Packaging
All Dev Label Update 15/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PH16030L,115 is an N-channel MOSFET manufactured by NXP Semiconductors, designed for efficient power management. It features a 30V drain-source voltage and can handle a continuous current of 38A at the case. This surface-mounted device is housed in a compact LFPAK56, also referred to as Power-SO8, package. It exhibits a low on-resistance of 16.9 milliohms at a gate-source voltage of 10V and a drain current of 15A. The MOSFET has a threshold voltage starting at 2V with a gate current of 1mA, offering a power dissipation capacity of 41.6W, making it suitable for high-efficiency performance in power applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.