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MRF8P20140WHSR3RF Mosfet 28 V 500 mA 1.88GHz ~ 1.91GHz 16dB 24W NI-780S-4L

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ABRmicro #.ABR285-MRF8P2-907487
ManufacturerNXP Semiconductors
MPN #.MRF8P20140WHSR3
Estimated Lead Time-
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In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberMRF8P20140
ConfigurationDual
Current - Test500 mA
Current Rating (Amps)-
Frequency1.88GHz ~ 1.91GHz
Gain16dB
Mounting StyleSurface Mount
Noise Figure-
Output Power24W
Package Type (Mfr.)NI-780S-4L
TechnologyLDMOS
Rated Voltage65 V
Voltage - Test28 V
Package / CaseNI-780S-4L
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Assembly/Origin
Mult Dev 14/Dec/2022
PCN Packaging
All Dev Label Update 15/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCN5A991G AT
HTSUS8541.29.0075 (With an operating frequency not less than 30 MHz; No import duty applies)
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Additional Details
The MRF8P20140WHSR3 is an RF MOSFET component manufactured by NXP Semiconductors. It is designed to operate at a voltage of 28 V and can handle a current of 500 mA. The device is suited for frequency ranges between 1.88 GHz and 1.91 GHz, providing a gain of 16 dB and an output power of 24 watts. This component is built using LDMOS technology and features a dual configuration, with a maximum voltage rating of 65 V. It comes in an NI-780S-4L package, making it suitable for incorporation into various electronic assemblies.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.