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BUT11AI,127Bipolar (BJT) Transistor NPN 450 V 5 A 100 W Through Hole TO-220AB

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ABRmicro #.ABR276-BUT11A-906285
ManufacturerNXP Semiconductors
MPN #.BUT11AI,127
Estimated Lead Time-
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DatasheetDatasheetBUT11AI (PDF)
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In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberBUT11
Collector Current (Iᴄ)@25°C5 A
Collector Cut-off Current (Iᴄᴇs)(Max.)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce14 @ 500mA, 5V
Frequency - Transition-
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Power - Max100 W
Package Type (Mfr.)TO-220AB
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5V @ 330mA, 2.5A
Collector-Emitter Breakdown Voltage (Max.)450 V
Package / CaseTO-220-3
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Extended Links
Datasheets
BUT11AI
Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Obsolescence/ EOL
Multiple Devices 30/Jun/2009
PCN Packaging
All Dev Label Update 15/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The BUT11AI,127 is a high-performance NPN bipolar junction transistor (BJT) manufactured by NXP Semiconductors. It supports up to 450 volts and 5 amperes of current, with a maximum power dissipation of 100 watts, making it suitable for high-power operations. Encased in a TO-220AB package for through-hole mounting, it is designed to maintain efficient thermal management. The transistor has a low collector-emitter saturation voltage of 1.5V at 330mA and 2.5A, with a base current of 1mA. It offers a current gain (hFE) of 14 at a collector current of 500mA and a collector-emitter voltage of 5V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.