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BUK9E4R4-80E,127N-Channel 80 V 120A (Tc) 349W (Tc) Through Hole I2PAK

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ABRmicro #.ABR2045-BUK9E4-1024534
ManufacturerNXP Semiconductors
MPN #.BUK9E4R4-80E,127
Estimated Lead Time-
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberBUK9
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)123 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)17130 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation349W (Tc)
RDS(on) Drain-to-Source On Resistance4.2mOhm @ 25A, 10V
Package Type (Mfr.)I2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.1V @ 1mA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Obsolescence/ EOL
MCU Dip Supply Situation 12/May/2015
PCN Packaging
All Dev Label Update 15/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK9E4R4-80E,127 is an N-channel MOSFET manufactured by NXP Semiconductors, designed for high-efficiency power switching applications. It features a maximum drain-to-source voltage of 80 V and can conduct a continuous current of up to 120 A when mounted on a suitable heatsink, with a power dissipation capacity of 349 W in this configuration. This MOSFET is housed in an I2PAK through-hole package, facilitating its integration into various circuits. The device offers a low on-resistance of 4.2 mOhm at 25 A and 10 V, contributing to reduced power losses and increased efficiency. Additionally, it has a gate threshold voltage of 2.1 V at 1 mA and supports gate drive conditions of 5 V and 10 V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.