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BUK9535-100A,127N-Channel 100 V 41A (Tc) 149W (Tc) Through Hole TO-220AB

1:$0.3410

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ABRmicro #.ABR2045-BUK953-956600
ManufacturerNXP Semiconductors
MPN #.BUK9535-100A,127
Estimated Lead Time-
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In Stock: 2366
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Unit Price$ 0.3410
Ext. Price$ 0.3410
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Qty.Unit PriceExt. Price
666$0.3410$227.1480
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C41A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3573 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation149W (Tc)
RDS(on) Drain-to-Source On Resistance34mOhm @ 25A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK9535-100A,127 is a MOSFET manufactured by NXP Semiconductors. It is an N-channel transistor designed for use in applications requiring efficient power handling, featuring a maximum drain-source voltage of 100 V and a continuous drain current of up to 41 A when housed in a TO-220AB package with adequate thermal management. The device can support a power dissipation of 149 W, ensuring reliable operation under demanding conditions. It operates with gate-source voltages of 4.5 V and 10 V and has a tolerance of up to ±10 V, making it versatile for various electronic switching applications.
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