Image is for reference only, the actual product serves as the standard.
BUK9524-55A,127N-Channel 55 V 46A (Tc) 105W (Tc) Through Hole TO-220AB

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BUK952-998152
ManufacturerNXP Semiconductors
MPN #.BUK9524-55A,127
Estimated Lead Time-
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
RF Mosfet 5 V 12 mA 400MHz 30dB CMPAK-4
N-Channel 30 V 100A (Tc) 204W (Tc) Through Hole TO-220AB
RF Mosfet 28 V 1.25 A 1.99GHz 20dB 40W NI-780-4
MRF1K50GNR5$162.7030
RF Mosfet 50 V 1.8MHz ~ 500MHz 23dB 1500W OM-1230G-4L
RF Mosfet 28 V 100 mA 2.17GHz 13.5dB 10W NI-360
RF Mosfet 28 V 900 mA 2.66GHz 15.5dB 20W NI-780H-2L
RF Mosfet 28 V 1.1 A 2.17GHz 17.3dB 33W NI-780S
Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberBUK95
Continuous Drain Current (ID) @ 25°C46A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1815 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation105W (Tc)
RDS(on) Drain-to-Source On Resistance21.7mOhm @ 25A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK9524-55A,127 is an N-channel MOSFET manufactured by NXP Semiconductors designed for power applications. It is housed in a TO-220AB package, a through-hole type, which allows for sturdy and reliable connections in a variety of electronic assemblies. This MOSFET can handle a maximum voltage of 55 V and a continuous drain current of 46A at the case temperature (Tc), with a total power dissipation capacity of 105 W under the same conditions. It has an input capacitance of 1815 pF at 25 V and features gate threshold voltages of ±10V, with a gate-source cutoff voltage of 2V at a drain current condition of 1mA. This combination of characteristics makes it suitable for tasks requiring efficient power handling within these specified limits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.