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BUK9524-55A,127N-Channel 55 V 46A (Tc) 105W (Tc) Through Hole TO-220AB
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ABRmicro #.ABR2045-BUK952-998152
ManufacturerNXP Semiconductors
MPN #.BUK9524-55A,127
Estimated Lead Time-
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DatasheetBUK9524-55A(PDF)
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberBUK95
Continuous Drain Current (ID) @ 25°C46A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1815 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation105W (Tc)
RDS(on) Drain-to-Source On Resistance21.7mOhm @ 25A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseTO-220-3
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Environmental Information
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK9524-55A,127 is an N-channel MOSFET manufactured by NXP Semiconductors designed for power applications. It is housed in a TO-220AB package, a through-hole type, which allows for sturdy and reliable connections in a variety of electronic assemblies. This MOSFET can handle a maximum voltage of 55 V and a continuous drain current of 46A at the case temperature (Tc), with a total power dissipation capacity of 105 W under the same conditions. It has an input capacitance of 1815 pF at 25 V and features gate threshold voltages of ±10V, with a gate-source cutoff voltage of 2V at a drain current condition of 1mA. This combination of characteristics makes it suitable for tasks requiring efficient power handling within these specified limits.
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