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BUK9520-55A,127N-Channel 55 V 54A (Tc) 118W (Tc) Through Hole TO-220AB

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ABRmicro #.ABR2045-BUK952-962844
ManufacturerNXP Semiconductors
MPN #.BUK9520-55A,127
Estimated Lead Time-
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In Stock: 6
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberBUK95
Continuous Drain Current (ID) @ 25°C54A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2210 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation118W (Tc)
RDS(on) Drain-to-Source On Resistance18mOhm @ 25A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK9520-55A,127 is a robust N-channel MOSFET produced by NXP Semiconductors. Housed in a TO-220AB package suitable for through-hole mounting, this transistor is designed to handle a maximum voltage of 55V and a continuous current of 54A when properly mounted to a heat sink. It features a maximum power dissipation of 118W under specified conditions. The device offers a gate-source voltage tolerance of ±10V and exhibits an input capacitance of 2210 pF at 25V. This makes it well-suited for high-power applications requiring efficient switching performance.
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