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BUK951R6-30E,127N-Channel 30 V 120A (Tc) 349W (Tc) Through Hole TO-220AB

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ABRmicro #.ABR2045-BUK951-972871
ManufacturerNXP Semiconductors
MPN #.BUK951R6-30E,127
Estimated Lead Time-
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In Stock: 8
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberBUK95
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)113 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)16150 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation349W (Tc)
RDS(on) Drain-to-Source On Resistance1.4mOhm @ 25A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.1V @ 1mA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Obsolescence/ EOL
MCU Dip Supply Situation 12/May/2015
PCN Packaging
All Dev Label Update 15/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK951R6-30E,127 is a semiconductor component manufactured by NXP Semiconductors, designed as an N-Channel MOSFET. It features a maximum voltage of 30 volts and can handle a continuous current of 120 amperes at its case temperature (Tc) with a power dissipation of 349 watts also at Tc. The package type is a TO-220AB, commonly used for through-hole mounting. This MOSFET operates with a gate-source threshold voltage up to ±10 volts and has a capacitance of 16,150 picofarads at 25 volts. It offers a low on-state resistance of 1.4 milliohms at a current of 25 amperes and a gate-source voltage of 10 volts, making it suitable for high-efficiency power management.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.