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BUK95150-55A,127N-Channel 55 V 13A (Tc) 53W (Tc) Through Hole TO-220AB

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ABRmicro #.ABR2045-BUK951-956104
ManufacturerNXP Semiconductors
MPN #.BUK95150-55A,127
Estimated Lead Time-
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In Stock: 3
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberBUK95
Continuous Drain Current (ID) @ 25°C13A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)339 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation53W (Tc)
RDS(on) Drain-to-Source On Resistance137mOhm @ 13A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK95150-55A,127 is a discrete N-channel MOSFET manufactured by NXP Semiconductors, designed for efficient electronic switching. It is capable of handling up to 55 volts and 13 amps in optimal conditions, with a power dissipation capacity of 53 watts when mounted properly. Packaged in a TO-220AB through-hole format, this MOSFET offers a low on-state resistance of 137 milliohms at 13A and 10V, ensuring minimized power loss. It requires a gate threshold voltage of 2 volts at 1mA and can tolerate gate-source voltages up to ±10 volts, making it suitable for various controlled switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.