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BUK9505-30A,127N-Channel 30 V 75A (Tc) 230W (Tc) Through Hole TO-220AB

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ABRmicro #.ABR2045-BUK950-1032931
ManufacturerNXP Semiconductors
MPN #.BUK9505-30A,127
Estimated Lead Time-
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberBUK95
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8600 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation230W (Tc)
RDS(on) Drain-to-Source On Resistance4.6mOhm @ 25A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Packaging
All Dev Label Update 15/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK9505-30A,127 is a robust N-Channel MOSFET developed by NXP Semiconductors, designed primarily for high-efficiency power management. It can handle a continuous drain current of 75A and supports a drain-source voltage of up to 30V, making it suitable for demanding thermal environments with a power dissipation capacity of 230W at its case temperature (Tc). This component features a gate threshold voltage at both 4.5V and 10V, with an allowable gate-source voltage range of ±10V. Packaged in a reliable TO-220AB through-hole format, the BUK9505-30A,127 offers a solid solution for high-current applications requiring low on-state resistance and fast switching capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.