BUK7Y25-80E/GFXN-Channel 80 V 39A (Tc) 95W (Tc) Surface Mount LFPAK56, Power-SO8
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ABRmicro #.ABR2045-BUK7Y2-1005950
ManufacturerNXP Semiconductors
MPN #.BUK7Y25-80E/GFX
Estimated Lead Time-
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberBUK7
Continuous Drain Current (ID) @ 25°C39A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)25.9 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1800 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation95W (Tc)
RDS(on) Drain-to-Source On Resistance25mOhm @ 10A, 10V
Package Type (Mfr.)LFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseSC-100, SOT-669
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Environmental Information
PCN Obsolescence/ EOL
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK7Y25-80E/GFX is an N-Channel MOSFET manufactured by NXP Semiconductors. It is designed for surface mount applications with an LFPAK56, Power-SO8 package. This MOSFET can handle a maximum voltage of 80 V and a continuous current of up to 39 A when properly managed for thermal performance, with a power dissipation capacity of 95 W. It features a total gate charge of 25.9 nC at 10 V, operates efficiently at a gate source voltage of 10 V, and has a threshold voltage of 4 V at a 1 mA drain current, making it suitable for high-power switching purposes.
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