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BUK753R5-60E,127N-Channel 60 V 120A (Tc) 293W (Tc) Through Hole TO-220AB

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ABRmicro #.ABR2045-BUK753-925707
ManufacturerNXP Semiconductors
MPN #.BUK753R5-60E,127
Estimated Lead Time-
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberBUK75
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)114 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8920 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation293W (Tc)
RDS(on) Drain-to-Source On Resistance3.5mOhm @ 25A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Obsolescence/ EOL
Multiple Devices 29/Dec/2014
PCN Packaging
All Dev Label Update 15/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK753R5-60E,127 is a power MOSFET manufactured by NXP Semiconductors, characterized by its N-channel configuration. It is designed to handle a maximum drain-source voltage of 60 volts and a continuous drain current of 120 amperes at the case temperature. Capable of dissipating up to 293 watts of power in optimal conditions, this component is housed in a TO-220AB through-hole package. It has a gate-source voltage rating of ±20 volts and a gate threshold voltage of 4 volts at a test current of 1 milliampere. The device features an input capacitance of 8920 picofarads at a gate-drain voltage of 25 volts, contributing to its suitability in high-efficiency power conversion and switching applications.
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