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BUK7523-75A,127N-Channel 75 V 53A (Tc) 138W (Tc) Through Hole TO-220AB
N/A
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ABRmicro #.ABR2045-BUK752-996946
ManufacturerNXP Semiconductors
MPN #.BUK7523-75A,127
Estimated Lead Time-
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DatasheetBUK7523-75A(PDF)
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberBUK75
Continuous Drain Current (ID) @ 25°C53A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2385 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation138W (Tc)
RDS(on) Drain-to-Source On Resistance23mOhm @ 25A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3
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Environmental Information
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK7523-75A,127 is an N-channel MOSFET manufactured by NXP Semiconductors. It is designed to handle a maximum voltage of 75V and a continuous current of 53A when properly mounted on a heatsink. The part is contained in a TO-220AB through-hole package, allowing for efficient heat dissipation. It has a power dissipation capacity of up to 138W under specified thermal conditions. The gate threshold voltage parameters include ±20V gate-to-source voltage and switching characteristics such as 10V and 4V at 1mA, making it suitable for a variety of electronic load regulation tasks.
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