BUK75150-55A,127N-Channel 55 V 11A (Tc) 36W (Tc) Through Hole TO-220AB
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ABRmicro #.ABR2045-BUK751-965956
ManufacturerNXP Semiconductors
MPN #.BUK75150-55A,127
Estimated Lead Time-
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Datasheet
BUK75150(76150)-55A(PDF)
BUK75150(76150)-55A(PDF)
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Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberBUK75
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)5.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)322 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation36W (Tc)
RDS(on) Drain-to-Source On Resistance150mOhm @ 5A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3
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Datasheets
Environmental Information
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK75150-55A is an N-Channel MOSFET manufactured by NXP Semiconductors. It features a drain-source voltage rating of 55 V and supports a continuous current of 11A when properly mounted on a heat sink. The device can dissipate up to 36W of power in such configurations, making it suitable for use in environments where efficient thermal management is crucial. Packaged in a TO-220AB through-hole form factor, it offers a capacitance of 322 pF at 25 V and a gate threshold voltage of 4V at 1mA. Moreover, the total gate charge is measured at 5.5 nC at a gate-source voltage of 10 V, enabling efficient switching performance in electronic circuits.
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